Search results for "Kinetic growth studie"

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Electronic properties and mobile defects distribution in amorphous semiconducting passive films

2003

A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.

Kinetic growth studieMott-Schottky theorySettore ING-IND/23 - Chimica Fisica ApplicataMobile defects distributionPassive films
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